| PART |
Description |
Maker |
| MAGX-000035-05000P |
GaN Wideband 50 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solution...
|
| MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| MAGX-002731-180L00 MAGX-002731-SB3PPR |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-003135-SB5PPR MAGX-003135-120L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
120W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MRF6V2010N |
Designed primarily for pulsed wideband large - signal output and driver
|
Motorola Semiconductor Products
|
| RF3826PCBA-411 RF3826TR7 |
30MHz TO 2500MHz, 9W GaN WIDEBAND
30MHz TO 2500MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| PH1214-20EL |
Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Poewr Transistor20W 雷达脉冲Poewr晶体管，20
|
Tyco Electronics
Rhopoint Components, Ltd.
|
| DS1339U-33 DS1339U-33_ DS1339 DS1339C-2 DS1339C-2_ |
I2C Serial Real-Time Clock
TRANS NPN BIPOL DUAL 160V SOT363
TRANS NPN DARL 40V SMD SOT-23
TRANSISTOR, NPN, SWITCHING , GENERAL PURPOSE, 3-PIN SOT-23
TRANS NPN 160V 350MW SMD SOT-23
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
http://
|
| DDW-JJD-N1 DDB-JJS-K1 DDB-JJS-K2 DDB-JJS-KL2-1-I1 |
LED GaN SINGLE COLOR LED, BLUE
LED GaN 氮化镓发光二极管
LED GaN SINGLE COLOR LED, WHITE
|
DOMINANT Opto Technologies Sdn. Bhd.
DOMINANT Opto Technologies Sdn Bhd.
DOMINANT[DOMINANT Semiconductors]
|
